Simulation of Gallium-Arsenide Based High Electron Mobility Transistors
نویسندگان
چکیده
We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown effects, the insulator-semiconductor interface, and the Schottky contact are considered. Keywords– Electrothermal effects, Simulation software, MODFETs, Electric breakdown, Schottky barriers.
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